%0 Journal Article
%T Model and Analyses of Transient Floating-Body Effect of SOI Devices<br>SOI器件中瞬态浮体效应的模拟与分析
%A BU Wei-hai
%A HUANG Ru
%A XU Wen-hua
%A ZHANG Xing
%A <br>卜伟海
%A 黄如
%A 徐文华
%A 张兴
%J 半导体学报
%D 2001
%I 
%X The behavior of transient floating-body effect in SOI MOSFET is simulated.The performance of the device is systematically reviewed by changing the parameters of the device.The influence of the transient floating body on CMOS/SOI circuits is also studied and analyzed,taking a ring oscillator as an example.A device structure is proposed to control the floating-body effect as well as the optimum design of the parameters.
%K SOI
%K floating-body effect
%K ring oscillator<br>SOI
%K 浮体效应
%K 环振
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7395D5B87D68D128&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=9CF7A0430CBB2DFD&sid=008520E0B52E94B3&eid=09D7E2FA8227CA7B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=13