Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing
利用ArF准分子激光退火获得小锗量子点的研究

Ge self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system.Then,the as-grown Ge quantum dots are annealed by ArF excimer laser.In the ultra-shot laser pulse duration,~20ns,bulk diffusion is forbidden,and only surface diffusion occurs,resulting in a laser induced quantum dot (LIQD).The diameter of the LIQD is 20~25nm which is much smaller than the as-grown dot and the LIQD has a higher density of about 6E10cm-2.The surface morphology evolution is investigated by AFM.