%0 Journal Article
%T Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing<br>利用ArF准分子激光退火获得小锗量子点的研究
%A Zeng Yugang
%A Han Genquan
%A Yu Jinzhong
%A <br>曾玉刚
%A 韩根全
%A 余金中
%J 半导体学报
%D 2008
%I 
%X Ge self-assembled quantum dots (SAQDs) are grown with a self-assembled UHV/CVD epitaxy system.Then,the as-grown Ge quantum dots are annealed by ArF excimer laser.In the ultra-shot laser pulse duration,~20ns,bulk diffusion is forbidden,and only surface diffusion occurs,resulting in a laser induced quantum dot (LIQD).The diameter of the LIQD is 20~25nm which is much smaller than the as-grown dot and the LIQD has a higher density of about 6E10cm-2.The surface morphology evolution is investigated by AFM.
%K Ge quantum dot
%K ArF excimer laser annealing
%K LIQD
%K AFM<br>Ge量子点
%K ArF准分子激光退火
%K 光致量子点
%K 原子力显微镜
%K Ge
%K quantum
%K dot
%K ArF
%K excimer
%K laser
%K annealing
%K LIQD
%K AFM
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=54D508B8A21B50E08F1B96C4E469D7A6&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=E158A972A605785F&sid=9A596D09E9486F3E&eid=0636354D8CF77519&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9