Mechanism of Reverse Snapback on I-V Characteristics of Power SITHs with Buried Gate Structure
埋栅型电力静电感应晶闸管的I-V特性反向转折机理

The reverse snapback phenomena(RSP)on I-V characteristics of static induction thyristors(SITH)are physically researched.The I-V curves of the power SITH exhibit reverse snapback phenomena,and even turn to the conducting-state,when the anode voltage in the forward blocking-state is increased to a critical value.The RSP I-V characteristics of the power SITH are analyzed in terms of operating mechanism,double carrier injection effect,space charge effect,electron-hole plasma in the channel,and the variation in ...