%0 Journal Article
%T Mechanism of Reverse Snapback on I-V Characteristics of Power SITHs with Buried Gate Structure<br>埋栅型电力静电感应晶闸管的I-V特性反向转折机理
%A Wang Yongshun
%A Li Hairong
%A Wu Rong
%A Li Siyuan
%A <br>王永顺
%A 李海蓉
%A 吴蓉
%A 李思渊
%J 半导体学报
%D 2008
%I 
%X The reverse snapback phenomena(RSP)on I-V characteristics of static induction thyristors(SITH)are physically researched.The I-V curves of the power SITH exhibit reverse snapback phenomena,and even turn to the conducting-state,when the anode voltage in the forward blocking-state is increased to a critical value.The RSP I-V characteristics of the power SITH are analyzed in terms of operating mechanism,double carrier injection effect,space charge effect,electron-hole plasma in the channel,and the variation in ...
%K power static induction thyristor
%K reverse snapback
%K electron-hole plasma
%K lifetime
%K injection level<br>电力静电感应晶闸管
%K 反向转折
%K 电子-空穴等离子体
%K 寿命
%K 注入水平
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=AC2A189C71A782BAD534883B4ACB83DE&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=38B194292C032A66&sid=FCACFF68346F8D4F&eid=4D4C81DBA842B7BD&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11