Effect of trapped charge accumulation on the retention of charge trapping memory
陷阱俘获存储器中电荷积累过程对保持特性的影响

The accumulation process of trapped charges in a TANOS cell during P/E cycling is investigated via numerical simulation. A recombination process between trapped charges is an important issue on the retention of charge trapping memory. Our results show that accumulated trapped holes during P/E cycling can have an influence on retention, and the recombination mechanism between trapped charges should be taken into account when evaluating the retention capability of TANOS.