%0 Journal Article
%T Effect of trapped charge accumulation on the retention of charge trapping memory<br>陷阱俘获存储器中电荷积累过程对保持特性的影响
%A Jin Rui
%A Liu Xiaoyan
%A Du Gang
%A Kang Jinfeng
%A Han Ruqi
%A <br>金锐
%A 刘晓彦
%A 杜刚
%A 康晋锋
%A 韩汝琦
%J 半导体学报
%D 2010
%I 
%X The accumulation process of trapped charges in a TANOS cell during P/E cycling is investigated via numerical simulation. A recombination process between trapped charges is an important issue on the retention of charge trapping memory. Our results show that accumulated trapped holes during P/E cycling can have an influence on retention, and the recombination mechanism between trapped charges should be taken into account when evaluating the retention capability of TANOS.
%K charge accumulation
%K charge trapping memory
%K retention characteristic<br>电荷积累，陷阱俘获存储器，保持特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=24D881D22DCAA21AC720781758A40AD6&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=59906B3B2830C2C5&sid=93FCB672AD15C9F6&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0