Dependence of Inversion Layer Thickness on Film Thickness in Thin-Film SOI Structures
薄膜SOI结构中反型层厚度与薄膜厚度的关系

The dependence of inversion layer thickness on film thickness in thin-film SOI structureis analysed theoretically by using computer simulation. A new concept and parameter, the criticalthickness of thin film all-bulk inversion, are introduced for the design of thin-film MOS)SOI devices. It is necessary to select the film thickness near to the all-bulk strong inversion criticalthicknesss in order to get high speed and high power working of ultrathin film MOS/SOIdevices.