%0 Journal Article
%T Dependence of Inversion Layer Thickness on Film Thickness in Thin-Film SOI Structures<br>薄膜SOI结构中反型层厚度与薄膜厚度的关系
%A Xia Yongwei/Institute of Semiconductors
%A Academia Sinica
%A PO Box
%A Beijing
%A ChinaWang Shouwu/Institute of Semiconductors
%A Academia Sinica
%A PO Box
%A Beijing
%A China
%A <br>夏永伟
%A 王守武
%J 半导体学报
%D 1990
%I 
%X The dependence of inversion layer thickness on film thickness in thin-film SOI structureis analysed theoretically by using computer simulation. A new concept and parameter, the criticalthickness of thin film all-bulk inversion, are introduced for the design of thin-film MOS)SOI devices. It is necessary to select the film thickness near to the all-bulk strong inversion criticalthicknesss in order to get high speed and high power working of ultrathin film MOS/SOIdevices.
%K Semiconductor device and Material
%K MOS structure
%K Field-effect transistors
%K design<br>薄膜
%K SOI
%K 反型层厚度
%K 薄膜厚度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9DAD30E150A91FD2&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=59906B3B2830C2C5&sid=CFC2B32D03D9F610&eid=78AF84DBB4041008&journal_id=1674-4926&journal_name=半导体学报&referenced_num=4&reference_num=1