Microfabrication of Nano-Scale Feature Lines
纳米级精细线条图形的微细加工

Electron-beam lithography with high resolution and ICP etching with high selectivity-ratio and high anisotropy are investigated.Using chemically amplified resist SAL-601 as the electron resist,optimal process parameters of electron-beam lithography and ICP etching are achieved.These parameters are combined with electron-beam proximity correction to form 30nm lines with clear-cut cross-sectional profiles.