%0 Journal Article
%T Microfabrication of Nano-Scale Feature Lines<br>纳米级精细线条图形的微细加工
%A Ren Liming
%A Wang Wenping
%A Chen Baoqin
%A Zhou Yi
%A Huang Ru
%A Zhang Xing
%A <br>任黎明
%A 王文平
%A 陈宝钦
%A 周毅
%A 黄如
%A 张兴
%J 半导体学报
%D 2004
%I 
%X Electron-beam lithography with high resolution and ICP etching with high selectivity-ratio and high anisotropy are investigated.Using chemically amplified resist SAL-601 as the electron resist,optimal process parameters of electron-beam lithography and ICP etching are achieved.These parameters are combined with electron-beam proximity correction to form 30nm lines with clear-cut cross-sectional profiles.
%K microfabrication
%K electron-beam lithography
%K proximity effect correction
%K ICP etching<br>微细加工
%K 电子束光刻
%K 邻近效应校正
%K ICP刻蚀
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2F71A62FC745A2C7&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=59906B3B2830C2C5&sid=72C9FC6259F90AE2&eid=7DFC61BD88FB3757&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=5