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半导体学报 2004
850nm Vertical Cavity Surface Emitting Laser Fabricated by Large Inclined Angle Ion Implantation Using Tungsten as Mask and Its Modulation Character
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Abstract:
By optimizing the technology parameters,850nm vertical cavity surface emitting laser is fabricated by large i nclined angle implantation using tungsten as mask,which is continuous operating at room temperature.The threshold current is lowest to 1.25mA.The light output power is about 0.92mW.The modulation performance of the device in TO package in dicated that the -3dB bandwidth is 4.0GHz,which can be applied in middle and h igh-speed optical communication.