%0 Journal Article
%T 850nm Vertical Cavity Surface Emitting Laser Fabricated by Large Inclined Angle Ion Implantation Using Tungsten as Mask and Its Modulation Character<br>钨丝掩模大角度倾斜离子注入850nm垂直腔面发射激光器及其高频调制特性
%A Wang Haisong
%A Du Guotong
%A Xu Chengdong
%A Song Junfeng
%A Tang Jun
%A Chen Hongda
%A Liu Yu
%A Zhu Ninghua
%A <br>王海嵩
%A 杜国同
%A 许成栋
%A 宋俊峰
%A 唐君
%A 陈弘达
%A 刘宇
%A 祝宁华
%J 半导体学报
%D 2004
%I 
%X By optimizing the technology parameters,850nm vertical cavity surface emitting laser is fabricated by large i nclined angle implantation using tungsten as mask,which is continuous operating at room temperature.The threshold current is lowest to 1.25mA.The light output power is about 0.92mW.The modulation performance of the device in TO package in dicated that the -3dB bandwidth is 4.0GHz,which can be applied in middle and h igh-speed optical communication.
%K using tungsten as mask
%K vertica l cavity surface emitting laser
%K modulation character<br>钨丝掩模
%K 垂直腔面发射激光器
%K 高频特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=429439955383CD0A&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=9CF7A0430CBB2DFD&sid=CF89D3C02791C82E&eid=008520E0B52E94B3&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=6