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半导体学报 2009
Charge transport performance of high resistivity CdZnTe crystals doped with In/Al
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Abstract:
To evaluate the charge transport properties of as-grown high resistivity CdZnTe crystals doped with In/Al, the particle spectroscopic response was measured using an un-collimated 241Am (5.48 MeV) radioactive source at room temperature. The electron mobil