%0 Journal Article
%T Charge transport performance of high resistivity CdZnTe crystals doped with In/Al<br>In/Al掺杂高电阻CdZnTe晶体载流子传输特性研究
%A Xu Yadong
%A Xu Lingyan
%A Wang Tao
%A Zha Gangqiang
%A Fu Li
%A Jie Wanqi
%A Sellin P
%A <br>徐亚东
%A 徐凌燕
%A 王涛
%A 查刚强
%A 傅莉
%A 介万奇
%A Sellin P
%J 半导体学报
%D 2009
%I 
%X To evaluate the charge transport properties of as-grown high resistivity CdZnTe crystals doped with In/Al, the particle spectroscopic response was measured using an un-collimated 241Am (5.48 MeV) radioactive source at room temperature. The electron mobil
%K CdZnTe crystals
%K particle pulse height spectra
%K charge transport performance
%K In/Al doping<br>CdZnTe晶体
%K α粒子脉冲响应谱
%K 载流子迁移特性
%K In/Al掺杂
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FED67D210B93821F714EF07BC44E4A4F&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=5D311CA918CA9A03&sid=83C6CB1AC1E8075D&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12