A Kind of New Technique of Mixing Gas(Ga)-Solid (Mixed Oxidation Product of Al)-Solid(Si)
一种气(Ga)-固(Al掺杂氧化物)-固(Si)掺杂新工艺

The research of open-tube double acceptor mixing technique is carried out to overcome the disadvantage of manufacturing high-voltage thyristor p type impurity diffusion technique.Through a great deal of experiments and technique argumentations,a kind of new technique of mixing gas (Ga)-solid (the mixed oxidation product of Al)-solid(Si) is developed.Proved by technique use,the mixing technique can distinctly improve the electrical parameters consistency,overall performance and qualified rate of device.The technique opens up a feasible double acceptor new technique for power semiconductor device research and production.