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半导体学报 2004
Research and Analysis of Gallium Mixture''''s Rs Effect
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Abstract:
In the definited open-tube diffusion Ga equipment,the reaction using hydrogen as gallium's source Ga 2O 3,and transported gas.Resorting to the exact conditions of controlling diffusion,Ga can diffuse in the SiO 2/Si system and the favorable impurity R s effect can be acquired.Based on gas diffusing action in Si and SiO 2,it is studied and analysized that the impurity R S effect mechanism coming from Ga diffusing in the naked Si system and the SiO 2/Si system and its heated oxygenation and the effect on R S of oxide film's quality and infection.
