%0 Journal Article
%T Research and Analysis of Gallium Mixture''''s Rs Effect<br>镓杂质R_S效应的研究与分析
%A Sun Ying
%A Liu Zhijun
%A Liu Xiuxi
%A <br>孙瑛
%A 刘志军
%A 刘秀喜
%J 半导体学报
%D 2004
%I 
%X In the definited open-tube diffusion Ga equipment,the reaction using hydrogen as gallium's source Ga 2O 3,and transported gas.Resorting to the exact conditions of controlling diffusion,Ga can diffuse in the SiO 2/Si system and the favorable impurity R s effect can be acquired.Based on gas diffusing action in Si and SiO 2,it is studied and analysized that the impurity R S effect mechanism coming from Ga diffusing in the naked Si system and the SiO 2/Si system and its heated oxygenation and the effect on R S of oxide film's quality and infection.
%K impurity R
%K s effect
%K naked Si system
%K SiO
%K 2/Si system
%K oxide film<br>杂质RS效应
%K 裸Si系
%K SiO2/Si系
%K 氧化膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E06CD704CE74EC35&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=CA4FD0336C81A37A&sid=DBF54A8E2A721A6D&eid=6270DC1B5693DDAF&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=3