Study and Optimization of CMP Slurry Used to Tantalum Barrier Layer of Copper Interconnection in ULSI
ULSI铜多层布线中钽阻挡层CMP抛光液的研究与优化

Based on alkaline slurry that used high concentration nanometer silica gel as abrasive and hydrogen peroxide as oxidant,a kind of slurry that fits in Cu/Ta CMP is studied.Adjusting pH value,reducing oxidation of slurry,and enhancing action of organic alkali are methods to reduce removal rate of Cu and increase removal rate of Ta,consequently gain a good selectivity of Cu/Ta.