%0 Journal Article
%T Study and Optimization of CMP Slurry Used to Tantalum Barrier Layer of Copper Interconnection in ULSI<br>ULSI铜多层布线中钽阻挡层CMP抛光液的研究与优化
%A Xing Zhe
%A Liu Yuling
%A Tan Baimei
%A Wang Xin
%A Li Weiwei
%A <br>邢哲
%A 刘玉岭
%A 檀柏梅
%A 王新
%A 李薇薇
%J 半导体学报
%D 2004
%I 
%X Based on alkaline slurry that used high concentration nanometer silica gel as abrasive and hydrogen peroxide as oxidant,a kind of slurry that fits in Cu/Ta CMP is studied.Adjusting pH value,reducing oxidation of slurry,and enhancing action of organic alkali are methods to reduce removal rate of Cu and increase removal rate of Ta,consequently gain a good selectivity of Cu/Ta.
%K multilevel metallization
%K chemical mechanical polishing
%K barrier layer
%K slurry
%K selectivity<br>多层布线
%K 化学机械抛光
%K 阻挡层
%K 抛光液
%K 选择性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4FD9A1AF5ACE5607&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=59906B3B2830C2C5&sid=C61B615AE87CE464&eid=646B4A3AE1FCDA00&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9