High contrast ratio, high uniformity multiple quantum well spatial light modulators
高对比度、高均匀性材料GaAs/AlGaAs多量子阱空间光调制器

Our latest research results on GaAs-AlGaAs multiple quantum well spatial light modulators are presented. The thickness uniformity of the epitaxial layers across the 3-inch wafer grown by our molecular beam epitaxy is better than 0.1%and the variation of cavity resonance wavelength within the wafer is only 0.9 nm.A contrast ratio(CR) of 102 by varying bias voltage from 0 to 6.7 V is achieved after fine tuning the cavity by etching an adjust layer.Both theoretical and experimental results demonstrate that inc...