%0 Journal Article
%T High contrast ratio, high uniformity multiple quantum well spatial light modulators<br>高对比度、高均匀性材料GaAs/AlGaAs多量子阱空间光调制器
%A Huang Yuyang
%A Liu H C
%A Wasilewski Z
%A Buchanan M
%A Laframboise S R
%A Yang Chen
%A Cui Guoxin
%A Bian Lifeng
%A Yang Hui
%A Zhang Yaohui
%A <br>黄寓洋
%A 刘惠春
%A Wasilewski Z
%A Buchanan M
%A Laframboise S R
%A 杨晨
%A 崔国新
%A 边历峰
%A 杨辉
%A 张耀辉
%J 半导体学报
%D 2010
%I 
%X Our latest research results on GaAs-AlGaAs multiple quantum well spatial light modulators are presented. The thickness uniformity of the epitaxial layers across the 3-inch wafer grown by our molecular beam epitaxy is better than 0.1%and the variation of cavity resonance wavelength within the wafer is only 0.9 nm.A contrast ratio(CR) of 102 by varying bias voltage from 0 to 6.7 V is achieved after fine tuning the cavity by etching an adjust layer.Both theoretical and experimental results demonstrate that inc...
%K spatial light modulator
%K multiple quantum well
%K uniformity
%K contrast ratio
%K adjust layer
%K matching condition<br>空间光调制器，多量子阱，均匀性，对比度，调节层，匹配条件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6C5AF1FA7CCFA3C31DA93558E8FB16F8&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=38B194292C032A66&sid=D82D9811DCB56895&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0