Technological Investigation of Contact Hole Filling and Aluminum Metallization Process in Sub-Micron IC Devices
亚微米IC器件中接触孔的填充和铝金属化工艺的技术

It is found that the stepcoverage is improved with the increase of temperature by using barrier layer and silicides in the aluminum metallization process of a sub\|micron IC device. To solve the problem arising with the high\|temperature aluminum deposition, processes such as the cold/hot aluminum sputtering and wetting layer are adopted in stead of the warm aluminum sputtering. Through investigation and a series of comparison experiments, it is concluded that the main factors influencing the filling performance are hot\|aluminum deposition temperature, hot\|aluminum deposition power, thickness of Ti wetting layer and the thickness ratio of cold/hot aluminum. The optimized processing conditions are achieved, which suit the practical sub\|micron IC device manufacture.