%0 Journal Article
%T Technological Investigation of Contact Hole Filling and Aluminum Metallization Process in Sub-Micron IC Devices<br>亚微米IC器件中接触孔的填充和铝金属化工艺的技术
%A LIANG Jing
%A HUANG Rong
%A |xu
%A ZHENG Guo
%A |xiang
%A LIN Jian
%A PANG Hai
%A |zhou
%A ZONG Xiang
%A |fu
%A <br>梁京
%A 黄榕旭
%A 郑国祥
%A 林健
%A 庞海舟
%A 宗祥福
%J 半导体学报
%D 2000
%I 
%X It is found that the stepcoverage is improved with the increase of temperature by using barrier layer and silicides in the aluminum metallization process of a sub\|micron IC device. To solve the problem arising with the high\|temperature aluminum deposition, processes such as the cold/hot aluminum sputtering and wetting layer are adopted in stead of the warm aluminum sputtering. Through investigation and a series of comparison experiments, it is concluded that the main factors influencing the filling performance are hot\|aluminum deposition temperature, hot\|aluminum deposition power, thickness of Ti wetting layer and the thickness ratio of cold/hot aluminum. The optimized processing conditions are achieved, which suit the practical sub\|micron IC device manufacture.
%K stepcoverage
%K planarization
%K barrier
%K wetting layer
%K collimator
%K SEM<br>阶梯覆盖
%K 平坦化
%K 阻挡层
%K 浸润层
%K 平行化器
%K 扫描电镜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5D0C89F70637FB31&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=B31275AF3241DB2D&sid=2C20277AC27E4821&eid=06D504E5261AB652&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=7