GaAs Microtips Grown by Selective LPE for SNOM Sensors
选择液相外延法制备GaAs SNOM微探尖

Selective liquid phase epitaxy(LPE) is used to fabricate GaAs microtips for scanning near-field optical microscopy(SNOM) sensors.The (001) GaAs substrates are used instead of the wafers of a vertical-cavity surface-emitting laser during the preliminary experiments.Scanning electron microscopy(SEM) images show that in appropriate conditions the microtips are pyramid-like and distribute uniformly on the wafers.This method not only settles the problem of aligning the microtips with light-emitting windows of VCSEL,but also has practical values in batch production and parallel scanning with several microtips.