%0 Journal Article
%T GaAs Microtips Grown by Selective LPE for SNOM Sensors<br>选择液相外延法制备GaAs SNOM微探尖
%A Zhang Hongzhi
%A Hu Lizhong
%A Sun Xiaojuan
%A Wang Zhijun
%A Liang Xiuping
%A <br>张红治
%A 胡礼中
%A 孙晓娟
%A 王志俊
%A 梁秀萍
%J 半导体学报
%D 2005
%I 
%X Selective liquid phase epitaxy(LPE) is used to fabricate GaAs microtips for scanning near-field optical microscopy(SNOM) sensors.The (001) GaAs substrates are used instead of the wafers of a vertical-cavity surface-emitting laser during the preliminary experiments.Scanning electron microscopy(SEM) images show that in appropriate conditions the microtips are pyramid-like and distribute uniformly on the wafers.This method not only settles the problem of aligning the microtips with light-emitting windows of VCSEL,but also has practical values in batch production and parallel scanning with several microtips.
%K selective LPE
%K microtips
%K SNOM<br>选择液相外延
%K 微探尖
%K 扫描近场光学显微术
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2BCA1A7BA32B2A9A&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=B31275AF3241DB2D&sid=6EEBEF38C7DFC97E&eid=7B747CE18E2C7596&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14