Effect of Vertical Emitter Ballasting Resistors on the Emitter Current Crowding Effect in Heterojunction Bipolar Transistors
垂直发射极镇流电阻在HBT中的发射极电流集边效应中的作用

Epitaxial emitter ballasting resistors are incorporated into power heterojunction bipolar transistors (HBTs) to improve thermal stability.It is proposed that this lightly doped layer can not only function as ballasting resistors used in multi finger power HBT cells,but also reduce the emitter current crowding effect very efficiently.