%0 Journal Article
%T Effect of Vertical Emitter Ballasting Resistors on the Emitter Current Crowding Effect in Heterojunction Bipolar Transistors<br>垂直发射极镇流电阻在HBT中的发射极电流集边效应中的作用
%A Chang Yuchun
%A Cui Hongfeng
%A Wang Jinzhong
%A Song Junfeng
%A Hailin Luo
%A Y Wang
%A Du Guotong
%A <br>常玉春
%A 崔洪峰
%A 王金忠
%A 宋俊峰
%A HailinLuo
%A Y Wang
%A 杜国同
%J 半导体学报
%D 2002
%I 
%X Epitaxial emitter ballasting resistors are incorporated into power heterojunction bipolar transistors (HBTs) to improve thermal stability.It is proposed that this lightly doped layer can not only function as ballasting resistors used in multi finger power HBT cells,but also reduce the emitter current crowding effect very efficiently.
%K heterojunction bipolar transistors
%K ballasting resistors
%K current crowding effect<br>异质结双极晶体管(HBT)
%K 镇流电阻
%K 电流集边效应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=CC257911CD952CB7&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=B31275AF3241DB2D&sid=23F919F7BAF87909&eid=821800203AD09E7B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=6