Electrical Characteristic of Oxygen-Related Donors in p-Type Czochralski Silicon
p型微氮直拉硅中氧施主的电学特性

The electrical behaviors of thermal donors and nitrogen- oxygen complexes in p- type CZ silicon are studied point.Af- ter the annealing of silicon in different cycles,the resistivities and the concentrations of oxygen are m easured by the four- point probe and by a Fourier transmission infrared spectrom eter(FTIR) at room temperature at wave num ber of110 7cm- 1 .It is demonstrated that the electrical characteristic of the thermal donor in p- type nitrogen- doped CZ silicon is the sam e as that in n- type nitrogen- doped CZ silicon.However,the elimination temperature of N- O complexes in p- type nitrogen- doped CZ silicon is lower than that in n- type nitrogen- doped CZ silicon.Itis suggested that boron enhances the dissociation of nitrogen- oxygen com plexes in p- type nitrogen- doped CZ silicon.