%0 Journal Article
%T Electrical Characteristic of Oxygen-Related Donors in p-Type Czochralski Silicon<br>p型微氮直拉硅中氧施主的电学特性
%A Yu Xuegong
%A Yang Deren
%A Ma Xiangyang
%A Tang Yan
%A Li Dongsheng
%A Li Liben
%A Que Duanlin
%A <br>余学功
%A 杨德仁
%A 马向阳
%A 汤艳
%A 李东升
%A 李立本
%A 阙端麟
%J 半导体学报
%D 2002
%I 
%X The electrical behaviors of thermal donors and nitrogen- oxygen complexes in p- type CZ silicon are studied point.Af- ter the annealing of silicon in different cycles,the resistivities and the concentrations of oxygen are m easured by the four- point probe and by a Fourier transmission infrared spectrom eter(FTIR) at room temperature at wave num ber of110 7cm- 1 .It is demonstrated that the electrical characteristic of the thermal donor in p- type nitrogen- doped CZ silicon is the sam e as that in n- type nitrogen- doped CZ silicon.However,the elimination temperature of N- O complexes in p- type nitrogen- doped CZ silicon is lower than that in n- type nitrogen- doped CZ silicon.Itis suggested that boron enhances the dissociation of nitrogen- oxygen com plexes in p- type nitrogen- doped CZ silicon.
%K czochralski silicon
%K nitrogen- oxygen complexes
%K thermal donors<br>直拉硅
%K 氮氧复合体
%K 热施主
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=32583B96200981B4&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=E158A972A605785F&sid=389106FB36CA8332&eid=B9B90065CF5CD7F0&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13