Influence of Deep Level Defects on Electrical Properties and Defect Control in Semi-Insulating InP
半绝缘InP中深能级缺陷对电学性质的影响和缺陷的控制

By combining the measurement results of electrical properties and deep level defects,the electrical properties,thermal stability,and electrical uniformity of semi-insulating single crystal InP are demonstrated that they have a close correlation with the content of the deep level defects.An approach to improving the material quality is given through analysis of the dependence of the deep level defects on annealing and growth conditions.The formation mechanism and nature of the deep level defects are discussed.