%0 Journal Article
%T Influence of Deep Level Defects on Electrical Properties and Defect Control in Semi-Insulating InP<br>半绝缘InP中深能级缺陷对电学性质的影响和缺陷的控制
%A Zhao Youwen
%A Dong Zhiyuan
%A Li Chengji
%A Duan Manlong
%A Sun Wenrong
%A <br>赵有文
%A 董志远
%A 李成基
%A 段满龙
%A 孙文荣
%J 半导体学报
%D 2006
%I 
%X By combining the measurement results of electrical properties and deep level defects,the electrical properties,thermal stability,and electrical uniformity of semi-insulating single crystal InP are demonstrated that they have a close correlation with the content of the deep level defects.An approach to improving the material quality is given through analysis of the dependence of the deep level defects on annealing and growth conditions.The formation mechanism and nature of the deep level defects are discussed.
%K InP
%K semi-insulating
%K defect<br>磷化铟
%K 半绝缘
%K 缺陷
%K 半绝缘
%K 深能级缺陷
%K 电学性质
%K 影响
%K 控制
%K Defect
%K Control
%K Electrical
%K Properties
%K Defects
%K Level
%K Deep
%K 形成机理
%K 属性
%K 材料质量
%K 关系
%K 生长条件
%K 热处理
%K 规律
%K 分析
%K 相关
%K 含量
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=70D1048611028411&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=38B194292C032A66&sid=500A64A3035F6B9C&eid=2A2AA8B7E19F0DF7&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=51