Optical and Electronic Properties of InGaN Thin Film Layers
铟镓氮薄膜的光电特性

InGaN layers grown on GaN/Al 2O 3 complex substrates by metalorganic vapor phase epitaxy (MOVPE) are studied by X ray diffraction,photoluminescence (PL),optical reflectance and Hall measurements.It is found that: (1) these InGaN layers are the single crystals,and their In composition could be increased from 0 to 0 26; (2) single peak,no multi peaks,in the photoluminescence spectra can be controlled between 360 and 555nm;(3) these photoluminescence are from direct carrier combination over energy gap,instead of indirect combination through impurity levels; (4) there is high electron density in the layers; (5) the crystalline quality of InGaN layers decreases with the increasing of In composition.