%0 Journal Article
%T Optical and Electronic Properties of InGaN Thin Film Layers<br>铟镓氮薄膜的光电特性
%A Han Peide
%A Liu Xianglin
%A Wang Xiaohui
%A Yuan Hairong
%A Chen Zhen
%A Li Yufeng
%A Lu Yuan
%A Wang Du
%A Lu Dacheng
%A Wang Zhanguo
%A <br>韩培德
%A 刘祥林
%A 王晓晖
%A 袁海荣
%A 陈振
%A 李昱峰
%A 陆沅
%A 汪度
%A 陆大成
%A 王占国
%J 半导体学报
%D 2002
%I 
%X InGaN layers grown on GaN/Al 2O 3 complex substrates by metalorganic vapor phase epitaxy (MOVPE) are studied by X ray diffraction,photoluminescence (PL),optical reflectance and Hall measurements.It is found that: (1) these InGaN layers are the single crystals,and their In composition could be increased from 0 to 0 26; (2) single peak,no multi peaks,in the photoluminescence spectra can be controlled between 360 and 555nm;(3) these photoluminescence are from direct carrier combination over energy gap,instead of indirect combination through impurity levels; (4) there is high electron density in the layers; (5) the crystalline quality of InGaN layers decreases with the increasing of In composition.
%K InGaN
%K MOVPE
%K PL<br>InGaN
%K MOVPE
%K PL
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5CD026F225862064&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=0B39A22176CE99FB&sid=475189FCB44F11F6&eid=856C2E13D1000DB7&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=9