Electron Tunneling Lifetime Through a GaAs-AlxGa1-xAs Double Barriers Heterostructure
GaAs-AlxGa1-xAs双势垒结构中电子共振隧穿寿命

The time-dependent Schrdinger equation is numerically solved by the combing transfer matrix and the Runge-Kutta method.The temporal evolution of the wave functions and tunneling time are discussed within a GaAs-Al_xGa_1-xAs double barriers structure.It indicates that the build-up time cannot be ignored in comparison with the tunneling lifetime for the small system case.Furthermore, the tunneling lifetimes are studied as the functions of the structure parameters.It is also found that the tunneling lifetime increases monotonously with the well width and the barriers thickness.