%0 Journal Article
%T Electron Tunneling Lifetime Through a GaAs-AlxGa1-xAs Double Barriers Heterostructure<br>GaAs-AlxGa1-xAs双势垒结构中电子共振隧穿寿命
%A Gong Jian
%A Liang Xixia
%A Ban Shiliang
%A <br>宫箭
%A 梁希侠
%A 班士良
%J 半导体学报
%D 2005
%I 
%X The time-dependent Schrdinger equation is numerically solved by the combing transfer matrix and the Runge-Kutta method.The temporal evolution of the wave functions and tunneling time are discussed within a GaAs-Al_xGa_1-xAs double barriers structure.It indicates that the build-up time cannot be ignored in comparison with the tunneling lifetime for the small system case.Furthermore, the tunneling lifetimes are studied as the functions of the structure parameters.It is also found that the tunneling lifetime increases monotonously with the well width and the barriers thickness.
%K double barrier heterostructure
%K resonant tunneling
%K lifetime<br>双势垒
%K 共振隧穿
%K 寿命
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0B95235CCAA31839&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=F3090AE9B60B7ED1&sid=1B889749E306CF0E&eid=EECD17CB3E221F65&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=23