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半导体学报 2002
Solid Phase Reaction of Ni/Pd/Si(100) and Enhancement of NiSi Thermal Stability Study
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Abstract:
The silicide formation for Ni/Pd bilayers on Si substrate is investigated.The results show that,when adding Pd into Ni/Si,thermal annealing leads to formation of a solid solution Ni 1-x Pd x Si layer with better thermal stability than NiSi.The nucleation temperature for NiSi 2 is retarded due to the Pd addition.The more Pd added,the higher the NiSi 2 nucleation temperature is.In the mean time,the nucleation for PdSi is promoted due to Ni addition.The enhancing of NiSi thermal stability is well explained by classic nucleation theory.