%0 Journal Article
%T Solid Phase Reaction of Ni/Pd/Si(100) and Enhancement of NiSi Thermal Stability Study<br>Meirhaeghe Ni/Pd/Si固相反应及NiSi热稳定性增强研究
%A Qu Xinping
%A Ru Guoping
%A Li Bingzong
%A C Detavernier
%A R Van Meirhaeghe
%A <br>屈新萍
%A 茹国平
%A 李炳宗
%A C Detavernier
%A R Van
%J 半导体学报
%D 2002
%I 
%X The silicide formation for Ni/Pd bilayers on Si substrate is investigated.The results show that,when adding Pd into Ni/Si,thermal annealing leads to formation of a solid solution Ni 1-x Pd x Si layer with better thermal stability than NiSi.The nucleation temperature for NiSi 2 is retarded due to the Pd addition.The more Pd added,the higher the NiSi 2 nucleation temperature is.In the mean time,the nucleation for PdSi is promoted due to Ni addition.The enhancing of NiSi thermal stability is well explained by classic nucleation theory.
%K NiSi
%K nucleation
%K solid solution
%K thermal stability<br>NiSi
%K 成核
%K 固熔体
%K 热稳定性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6C1E6A37966F8BE5&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=708DD6B15D2464E8&sid=778972EBEFCE1267&eid=A60ED5C9472B8BEB&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9