Thickness Measurements for Ultrathin-Film Insulator MOS Structure Using Fowler-Nordheim Tunneling Current Oscillations
利用FN振荡电流测量超薄栅MOS结构的栅氧化层厚度

A method is given for measuring the thickness of gate oxide and the effective electron mass in the conduction band of gate oxide in MOS structure using the extrema of Fowler\|Nordheim tunneling current oscillations. Interference method is introduced to analyze the process of electron tunneling potential barrier. With this method, the relation between the applied voltage, oxide thickness, barrier height and effective electron mass can be obtained very conveniently. The big advantage of this method is accuracy and convenience. And it can be applied easily to the arbitrary potential barrier and well.