%0 Journal Article
%T Thickness Measurements for Ultrathin-Film Insulator MOS Structure Using Fowler-Nordheim Tunneling Current Oscillations<br>利用FN振荡电流测量超薄栅MOS结构的栅氧化层厚度
%A MAO Ling
%A |feng
%A TAN Chang
%A |hua
%A XU Ming
%A |zhen
%A WEI Jian
%A |lin
%A <br>毛凌锋
%A 谭长华
%A 许铭真
%A 卫建林
%J 半导体学报
%D 2000
%I 
%X A method is given for measuring the thickness of gate oxide and the effective electron mass in the conduction band of gate oxide in MOS structure using the extrema of Fowler\|Nordheim tunneling current oscillations. Interference method is introduced to analyze the process of electron tunneling potential barrier. With this method, the relation between the applied voltage, oxide thickness, barrier height and effective electron mass can be obtained very conveniently. The big advantage of this method is accuracy and convenience. And it can be applied easily to the arbitrary potential barrier and well.
%K tunnel
%K MOS structure
%K interference<br>隧穿
%K 金属氧化物半导体结构
%K 干涉
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D0EE14C957D826B3&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=F3090AE9B60B7ED1&sid=E6D5A068841F33F3&eid=F0CB1CC137DFCF2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=17