A Reactive Ion Etching Rate Model for VLSI Process Simulation
一种用于VLSI工艺模拟的反应离子刻蚀速率模型

A reactive ion etching (RIE) model for VLSI process simulation is presented. Statisticalmathematics method Combined with fewer experiments is used in the establishment of the model.It is suitable for practical application with high precision.The precision of the modelis 5% for CF_4/O_2 etching silicon dioxide and SF_6/O_2 etching phosphorus-doped poly-silicon.The implanation of the model into corresponding process simulator will raise the simulationof the characteristics of sub-micron dry etching process to a new level.