%0 Journal Article
%T A Reactive Ion Etching Rate Model for VLSI Process Simulation<br>一种用于VLSI工艺模拟的反应离子刻蚀速率模型
%A FENG Xiangming/Microelectronics Institute
%A Fudan UniversityRUAN Gang/Microelectronics Institute
%A Fudan University
%A <br>冯向明
%A 阮刚
%J 半导体学报
%D 1990
%I 
%X A reactive ion etching (RIE) model for VLSI process simulation is presented. Statisticalmathematics method Combined with fewer experiments is used in the establishment of the model.It is suitable for practical application with high precision.The precision of the modelis 5% for CF_4/O_2 etching silicon dioxide and SF_6/O_2 etching phosphorus-doped poly-silicon.The implanation of the model into corresponding process simulator will raise the simulationof the characteristics of sub-micron dry etching process to a new level.
%K Reactive ion etching
%K Etching process simulation
%K statistical mathematics<br>VLSI
%K 离子刻蚀
%K 工艺模拟
%K 模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5DB5EE766C74CD46&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=CA4FD0336C81A37A&sid=E514EE58E0E50ECF&eid=95D537AC89B28832&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2