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半导体学报 2001
Bandgap Narrowing of Strained Si1-xGex as a Function of Ge Fraction,Temperature and Impurity Concentration
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Abstract:
An empirical method is proposed for determining the total bandgap narrowing in the base of a SiGe HBT,which is a function of temperature,impurity concentration and germanium fraction.Calculated values have been obtained for a wide range of boron base doping concentrations at different temperatures.The results are very comparable with the theoretical and experimental results given by the literature.
