%0 Journal Article
%T Bandgap Narrowing of Strained Si1-xGex as a Function of Ge Fraction,Temperature and Impurity Concentration<br>温度、Ge含量和掺杂浓度对Si_(1-x)Ge_x禁带宽度的影响
%A JIN Hai-yan
%A ZHANG Li-Chun
%A <br>金海岩
%A 张利春
%J 半导体学报
%D 2001
%I 
%X An empirical method is proposed for determining the total bandgap narrowing in the base of a SiGe HBT,which is a function of temperature,impurity concentration and germanium fraction.Calculated values have been obtained for a wide range of boron base doping concentrations at different temperatures.The results are very comparable with the theoretical and experimental results given by the literature.
%K SiGe base material
%K bandgap narrowing
%K Fermi level
%K degenerate semiconductor<br>锗硅材料
%K 禁带变窄量
%K 费米能级
%K 简并半导体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E618373FC9B072D0&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=9CF7A0430CBB2DFD&sid=7D34DED3F877BD2D&eid=6BF76AE9E086F688&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=9