Ku-Band 20W GaAs Power PHEMT
Ku波段20W GaAs功率PHEMT

A GaAs power PHEMT with a dielectric-assisted T-shaped gate is reported. The gate length and the dimension of the gate head can be controlled in the T-shaped gate processing, and good process controllability and high yield can be achieved. GaAs power PHEMTs with a gate width of 19. 2ram and Ku-band internally matched transistors with the combination of two chips are developed. The high power device demonstrates an output power of 20W with a power gain of 6dB and a typical power-added efficiency of 31% across the band of 14.0-14.5GHz.