%0 Journal Article
%T Ku-Band 20W GaAs Power PHEMT<br>Ku波段20W GaAs功率PHEMT
%A Zhong Shichang
%A Chen Tangsheng
%A <br>钟世昌
%A 陈堂胜
%J 半导体学报
%D 2006
%I 
%X A GaAs power PHEMT with a dielectric-assisted T-shaped gate is reported. The gate length and the dimension of the gate head can be controlled in the T-shaped gate processing, and good process controllability and high yield can be achieved. GaAs power PHEMTs with a gate width of 19. 2ram and Ku-band internally matched transistors with the combination of two chips are developed. The high power device demonstrates an output power of 20W with a power gain of 6dB and a typical power-added efficiency of 31% across the band of 14.0-14.5GHz.
%K T-shaped gate
%K GaAs
%K PHEMT
%K internal matching<br>T型栅
%K GaAs
%K PHEMT
%K 内匹配
%K 波段
%K GaAs
%K 功率附加效率
%K PHEMT
%K 功率增益
%K 输出功率
%K 频带
%K 内匹配
%K 合成
%K 芯片
%K 栅宽
%K 工艺制作
%K 工艺成品率
%K 可控性
%K 控制
%K 尺寸
%K 栅长
%K 栅工艺
%K 工艺研制
%K 介质
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B01FA1E4370124C5&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=F3090AE9B60B7ED1&sid=64C4335F00120D16&eid=68171D3FB779E811&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8