%0 Journal Article %T Ku-Band 20W GaAs Power PHEMT
Ku波段20W GaAs功率PHEMT %A Zhong Shichang %A Chen Tangsheng %A
钟世昌 %A 陈堂胜 %J 半导体学报 %D 2006 %I %X A GaAs power PHEMT with a dielectric-assisted T-shaped gate is reported. The gate length and the dimension of the gate head can be controlled in the T-shaped gate processing, and good process controllability and high yield can be achieved. GaAs power PHEMTs with a gate width of 19. 2ram and Ku-band internally matched transistors with the combination of two chips are developed. The high power device demonstrates an output power of 20W with a power gain of 6dB and a typical power-added efficiency of 31% across the band of 14.0-14.5GHz. %K T-shaped gate %K GaAs %K PHEMT %K internal matching
T型栅 %K GaAs %K PHEMT %K 内匹配 %K 波段 %K GaAs %K 功率附加效率 %K PHEMT %K 功率增益 %K 输出功率 %K 频带 %K 内匹配 %K 合成 %K 芯片 %K 栅宽 %K 工艺制作 %K 工艺成品率 %K 可控性 %K 控制 %K 尺寸 %K 栅长 %K 栅工艺 %K 工艺研制 %K 介质 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B01FA1E4370124C5&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=F3090AE9B60B7ED1&sid=64C4335F00120D16&eid=68171D3FB779E811&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8