Effects of Bandgap Narrowing Induced by heavy Doping in Abrupt HBTs on Their Currents
重掺杂能带结构的变化对突变HBT电流影响

The bandgap narrowing is distributed between the conduction and valence bands,according to the Jain-Roulston model,and its effects on the currents of abrupt AlGaAs/GaAs HBTs including the self-heating effect,are analyzed.By comparison experimental results with the results of other distribution models of BGN commonly used in commercial software,it can be concluded that using an accurate dopant-dependent BGN distribution model between bands is very important.