%0 Journal Article
%T Effects of Bandgap Narrowing Induced by heavy Doping in Abrupt HBTs on Their Currents<br>重掺杂能带结构的变化对突变HBT电流影响
%A Zhou Shouli
%A Cui Hailin
%A Huang Yongqing
%A Ren Xiaomin
%A <br>周守利
%A 崔海林
%A 黄永清
%A 任晓敏
%J 半导体学报
%D 2006
%I 
%X The bandgap narrowing is distributed between the conduction and valence bands,according to the Jain-Roulston model,and its effects on the currents of abrupt AlGaAs/GaAs HBTs including the self-heating effect,are analyzed.By comparison experimental results with the results of other distribution models of BGN commonly used in commercial software,it can be concluded that using an accurate dopant-dependent BGN distribution model between bands is very important.
%K HBT
%K heavy doping effects
%K bandgap narrowing
%K Jain-Roulston model<br>HBT
%K 重掺杂效应
%K 禁带变窄
%K Jain-Roulston模型
%K 重掺杂
%K 能带结构
%K 变化
%K 突变异质结
%K 电流
%K 影响
%K Currents
%K HBTs
%K Doping
%K Induced
%K Narrowing
%K Bandgap
%K 体分布
%K 性能分析
%K 实验测量
%K 差别
%K 结果
%K 计算
%K 分布模型
%K 研究
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F155BDFA67E41242&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=CA4FD0336C81A37A&sid=4DB1E72614E68564&eid=DDD31293A7C7D057&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14