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半导体学报 2001
Substrate Hot Hole Coupled TDDB Effects of Thin Gate
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Abstract:
SHH (Substrate Hot Hole) enhanced breakdown characteristic of thin SiO 2 is investigated by using SHH injection techniques.Compared with conventional F N stressing experiments,SHH induced thin gate oxide breakdown shows different breakdown characteristics.Depending the injected hole flux density,hole energy and the gate voltage,its charge breakdown is much larger than that of F N stress.It is revealed that F N stress induced thin gate oxide breakdown is not simply determined by the total number of the injected holes.A new SHH enhanced TDDB model is presented.
