%0 Journal Article
%T Substrate Hot Hole Coupled TDDB Effects of Thin Gate<br>衬底热空穴耦合的薄栅TDDB效应
%A LIU Hong xia
%A HAO Yue
%A ZHANG Jin cheng
%A <br>刘红侠
%A 郝跃
%A 张进城
%J 半导体学报
%D 2001
%I 
%X SHH (Substrate Hot Hole) enhanced breakdown characteristic of thin SiO 2 is investigated by using SHH injection techniques.Compared with conventional F N stressing experiments,SHH induced thin gate oxide breakdown shows different breakdown characteristics.Depending the injected hole flux density,hole energy and the gate voltage,its charge breakdown is much larger than that of F N stress.It is revealed that F N stress induced thin gate oxide breakdown is not simply determined by the total number of the injected holes.A new SHH enhanced TDDB model is presented.
%K thin gate oxide
%K TDDB
%K SHH
%K charge to breakdown
%K model<br>薄栅氧化层
%K 经时击穿
%K 衬底热空穴
%K 击穿电荷
%K 模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=CCBCD15378CFCA5C&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=F3090AE9B60B7ED1&sid=BBED0819A2A875B8&eid=E97B7F8EBE42C30F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=6